issue 2 - august 2005 1 www.zetex.com ? zetex semiconductors plc 2005 zxtn2040f sot23 40 volt npn silicon planar medium power transistor summary v (br)ceo > 40v i c(cont) = 1a v ce(sat) < 500mv @ 1a complementary type zxtp2041f description this transistor combines high gain, high current operation and low saturation voltage making it ideal for power mosfet gate driving and low loss power switching. features low saturation voltage for reduced power dissipation 1 to 2 amp high current capability pb-free sot23 package applications power mosfet gate driving low loss power switching ordering information device marking n40 device reel size tape width quantity per reel zxtn2040fta 7? 8mm 3,000 ZXTN2040FTC 13? 8mm 10,000 pin out - top view
zxtn2040f issue 2 - august 2005 2 www.zetex.com ? zetex semiconductors plc 2005 absolute maximum ratings parameter symbol limit unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 5.0 v peak pulse current i cm 2a continuous collector current * notes: * for a device surface mounted on a 15mm x 15mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. i c 1a peak base current i bm 1a power dissipation @ t a =25c * p d 350 mw operating and storage temperature t j :t stg -55 to +150 c
zxtn2040f issue 2 - august 2005 3 www.zetex.com ? zetex semiconductors plc 2005 electrical characteristics (@t amb = 25c) parameter symbol min. max. unit conditions collector-base breakdown voltage v (br)cbo 40 v i c =100 a collector-emitter breakdown voltage v (br)ceo 40 v i c =10ma * notes: * measured under pulsed conditions. pulse width=300 s. duty cycle 2% spice parameter data is available upon request for this device emitter-base breakdown voltage v (br)ebo 5v i e =100 a collector-emitter cut-off current i ces 100 na v ce =30v collector-base cut-off current i cbo 100 na v cb =30v emitter-base cut-off current i ebo 100 na v eb =4v static forward current transfer ratio h fe 300 300 200 35 900 i c =1ma, v ce =5v * i c =500ma, v ce =5v * i c =1a, v ce =5v * i c =2a, v ce =5v * collector-emitter saturation voltage v ce(sat) 0.2 0.3 0.5 v v v i c =100ma, i b =1ma * i c =500ma, i b =50ma * i c =1a, i b =100ma * base-emitter saturation voltage v be(sat) 1.1 v i c =1a, i b =100ma * base-emitter turn-on voltage v be(on) 1.0 v i c =1a, v ce =5v * transition frequency f t 150 i c =50ma, v ce =10v f=100mhz output capacitance c obo 10 pf v cb =10v, f=1mhz
zxtn2040f issue 2 - august 2005 4 www.zetex.com ? zetex semiconductors plc 2005 typical characteristics v ce(sat) -(v) v be(sat) - (v) h fe - typical gain v be(on) - (v) v ce(sat) -(v) i c -collector current (a) v ce(sat) v i c i c -collector current i c -collector current v be(sat) v i c h fe v i c i c -collector current i c -collector current v be(on) v i c i c -collector current v ce(sat) v i c safe operating area v ce - collector emitter voltage (v) 10a 1a 10ma 100ma 1ma 100ma 10ma 10a 1a 1ma 100ma 10ma 10a 1a 10ma 1ma 100ma 1a 10a 1ma 100ma 10ma 10a 1a 0.1v 10v 100v 1v 1ma 0 0.6 0.4 0.2 0.8 1.0 1.2 1.4 200 0 600 400 800 1000 0.6 0.8 1.0 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 10 0.1 1 0 0.01 0.001 0.1 0.2 0.3 0.4 0.5 -55 c +25 c +100 c i c /i b =10 +25 c i c /i b =10 i c /i b =50 i c /i b =100 v ce =5v +100 c -55 c +25 c -55 c +25 c +100 c i c /i b =10 +100 c -55 c +25 c v ce =5v 1s dc 100ms 10ms 100us 1ms
zxtn2040f issue 2 - august 2005 5 www.zetex.com ? zetex semiconductors plc 2005 these offices are supported by agents and di stributors in major countries world-wide. this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com packaging details - sot23 package dimensions dimensions in inches are control dimensions, dimensions in millimeters are approximate. dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom. 0.0375 nom. g 1.90 nom. 0.075 nom. - - - - - l n h g a c f b m k d 3 leads
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